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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A *Good Linearity of hFE *Wide Area of Safe Operation APPLICATIONS *Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i -60 V -60 V -5 V -3 A -6 A 2 W UNIT .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= -1mA; IB= 0 B 2SB1370 MIN -60 -60 -5 TYP. MAX UNIT V V V IC= -50A; IE= 0 IE= -50A; IC= 0 IC= -2A; IB= -0.2A B -1.5 -1.5 V V A A IC= -2A; IB= -0.2A B VCB= -60V; IE= 0 Current-Gain--Bandwidth Product hFE Classifications E 100-200 F 160-320 w w w. sem isc VEB= -4V; IC= 0 IC= -0.5A; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz .cn i 100 -10 -10 320 80 15 pF MHz IC=-0.5A; VCE= -5V; ftest= 5MHz isc Websitewww.iscsemi.cn 2 |
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